FDMJ1028N
FDMJ1028N
Modèle de produit:
FDMJ1028N
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET 2N-CH 20V 3.2A 6-MICROFET
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
79998 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FDMJ1028N.pdf

introduction

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Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1.5V @ 250µA
Package composant fournisseur:6-MicroFET (2x2)
Séries:PowerTrench®
Rds On (Max) @ Id, Vgs:90 mOhm @ 3.2A, 4.5V
Puissance - Max:800mW
Emballage:Tape & Reel (TR)
Package / Boîte:6-WFDFN Exposed Pad
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:200pF @ 10V
Charge de la porte (Qg) (Max) @ Vgs:3nC @ 4.5V
type de FET:2 N-Channel (Dual)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):20V
Description détaillée:Mosfet Array 2 N-Channel (Dual) 20V 3.2A 800mW Surface Mount 6-MicroFET (2x2)
Courant - Drainage continu (Id) à 25 ° C:3.2A
Email:[email protected]

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