FDMQ86530L
FDMQ86530L
Modèle de produit:
FDMQ86530L
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET 4N-CH 60V 8A MLP4.5X5
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
8017 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FDMQ86530L.pdf

introduction

We can supply FDMQ86530L, use the request quote form to request FDMQ86530L pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDMQ86530L.The price and lead time for FDMQ86530L depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDMQ86530L.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Package composant fournisseur:12-MLP (5x4.5)
Séries:GreenBridge™ PowerTrench®
Rds On (Max) @ Id, Vgs:17.5 mOhm @ 8A, 10V
Puissance - Max:1.9W
Emballage:Tape & Reel (TR)
Package / Boîte:12-WDFN Exposed Pad
Autres noms:FDMQ86530LTR
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:39 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:2295pF @ 30V
Charge de la porte (Qg) (Max) @ Vgs:33nC @ 10V
type de FET:4 N-Channel (H-Bridge)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):60V
Description détaillée:Mosfet Array 4 N-Channel (H-Bridge) 60V 8A 1.9W Surface Mount 12-MLP (5x4.5)
Courant - Drainage continu (Id) à 25 ° C:8A
Email:[email protected]

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