STU6N65M2
STU6N65M2
Onderdeel nummer:
STU6N65M2
Fabrikant:
STMicroelectronics
Beschrijving:
MOSFET N-CH 650V 4A IPAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
9550 Pieces
Aflevertijd:
1-2 days
Data papier:
STU6N65M2.pdf

Invoering

We can supply STU6N65M2, use the request quote form to request STU6N65M2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STU6N65M2.The price and lead time for STU6N65M2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STU6N65M2.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:IPAK (TO-251)
Serie:MDmesh™
Rds On (Max) @ Id, VGS:1.35 Ohm @ 2A, 10V
Vermogensverlies (Max):60W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Short Leads, IPak, TO-251AA
Andere namen:497-15044-5
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:226pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:9.8nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):650V
gedetailleerde beschrijving:N-Channel 650V 4A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
Current - Continuous Drain (Id) @ 25 ° C:4A (Tc)
Email:[email protected]

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