STU6N65M2
STU6N65M2
型號:
STU6N65M2
製造商:
STMicroelectronics
描述:
MOSFET N-CH 650V 4A IPAK
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
9550 Pieces
發貨時間:
1-2 days
數據表:
STU6N65M2.pdf

簡單介紹

We can supply STU6N65M2, use the request quote form to request STU6N65M2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STU6N65M2.The price and lead time for STU6N65M2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STU6N65M2.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±25V
技術:MOSFET (Metal Oxide)
供應商設備封裝:IPAK (TO-251)
系列:MDmesh™
RDS(ON)(最大值)@標識,柵極電壓:1.35 Ohm @ 2A, 10V
功率耗散(最大):60W (Tc)
封装:Tube
封裝/箱體:TO-251-3 Short Leads, IPak, TO-251AA
其他名稱:497-15044-5
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:226pF @ 100V
柵極電荷(Qg)(Max)@ Vgs:9.8nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):650V
詳細說明:N-Channel 650V 4A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
電流 - 25°C連續排水(Id):4A (Tc)
Email:[email protected]

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