STU6N65M2
STU6N65M2
Varenummer:
STU6N65M2
Fabrikant:
STMicroelectronics
Beskrivelse:
MOSFET N-CH 650V 4A IPAK
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
9550 Pieces
Leveringstid:
1-2 days
Datablad:
STU6N65M2.pdf

Introduktion

We can supply STU6N65M2, use the request quote form to request STU6N65M2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STU6N65M2.The price and lead time for STU6N65M2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STU6N65M2.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:IPAK (TO-251)
Serie:MDmesh™
Rds On (Max) @ Id, Vgs:1.35 Ohm @ 2A, 10V
Power Dissipation (Max):60W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-251-3 Short Leads, IPak, TO-251AA
Andre navne:497-15044-5
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:226pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:9.8nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):650V
Detaljeret beskrivelse:N-Channel 650V 4A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:4A (Tc)
Email:[email protected]

Quick Request Citat

Varenummer
Antal
Selskab
E-mail
telefon
Kommentarer