STU6N65M2
STU6N65M2
Artikelnummer:
STU6N65M2
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 650V 4A IPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
9550 Pieces
Lieferzeit:
1-2 days
Datenblatt:
STU6N65M2.pdf

Einführung

We can supply STU6N65M2, use the request quote form to request STU6N65M2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STU6N65M2.The price and lead time for STU6N65M2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STU6N65M2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:IPAK (TO-251)
Serie:MDmesh™
Rds On (Max) @ Id, Vgs:1.35 Ohm @ 2A, 10V
Verlustleistung (max):60W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3 Short Leads, IPak, TO-251AA
Andere Namen:497-15044-5
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:226pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:9.8nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 4A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A (Tc)
Email:[email protected]

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