STU6N65M2
STU6N65M2
Nomor bagian:
STU6N65M2
Pabrikan:
STMicroelectronics
Deskripsi:
MOSFET N-CH 650V 4A IPAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
9550 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
STU6N65M2.pdf

pengantar

We can supply STU6N65M2, use the request quote form to request STU6N65M2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number STU6N65M2.The price and lead time for STU6N65M2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# STU6N65M2.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:IPAK (TO-251)
Seri:MDmesh™
Rds Pada (Max) @ Id, Vgs:1.35 Ohm @ 2A, 10V
Power Disipasi (Max):60W (Tc)
Pengemasan:Tube
Paket / Case:TO-251-3 Short Leads, IPak, TO-251AA
Nama lain:497-15044-5
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:226pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:9.8nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 4A (Tc) 60W (Tc) Through Hole IPAK (TO-251)
Current - Continuous Drain (Id) @ 25 ° C:4A (Tc)
Email:[email protected]

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