SI8823EDB-T2-E1
SI8823EDB-T2-E1
Varenummer:
SI8823EDB-T2-E1
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CH 20V 2.7A 4-MICROFOOT
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
33330 Pieces
Leveringstid:
1-2 days
Datablad:
SI8823EDB-T2-E1.pdf

Introduktion

We can supply SI8823EDB-T2-E1, use the request quote form to request SI8823EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8823EDB-T2-E1.The price and lead time for SI8823EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8823EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:4-MICRO FOOT® (0.8x0.8)
Serie:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:95 mOhm @ 1A, 4.5V
Power Dissipation (Max):900mW (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:4-XFBGA
Andre navne:SI8823EDB-T2-E1TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:46 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:580pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
FET Type:P-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):1.5V, 4.5V
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:P-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:2.7A (Tc)
Email:[email protected]

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