SI8823EDB-T2-E1
SI8823EDB-T2-E1
Part Number:
SI8823EDB-T2-E1
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 20V 2.7A 4-MICROFOOT
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
33330 Pieces
Delivery Time:
1-2 days
Data sheet:
SI8823EDB-T2-E1.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-MICRO FOOT® (0.8x0.8)
Series:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:95 mOhm @ 1A, 4.5V
Power Dissipation (Max):900mW (Tc)
Packaging:Tape & Reel (TR)
Package / Case:4-XFBGA
Other Names:SI8823EDB-T2-E1TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:46 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:580pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8)
Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
Email:[email protected]

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