SI8823EDB-T2-E1
SI8823EDB-T2-E1
型號:
SI8823EDB-T2-E1
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET P-CH 20V 2.7A 4-MICROFOOT
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
33330 Pieces
發貨時間:
1-2 days
數據表:
SI8823EDB-T2-E1.pdf

簡單介紹

We can supply SI8823EDB-T2-E1, use the request quote form to request SI8823EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8823EDB-T2-E1.The price and lead time for SI8823EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8823EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:800mV @ 250µA
Vgs(最大):±8V
技術:MOSFET (Metal Oxide)
供應商設備封裝:4-MICRO FOOT® (0.8x0.8)
系列:TrenchFET® Gen III
RDS(ON)(最大值)@標識,柵極電壓:95 mOhm @ 1A, 4.5V
功率耗散(最大):900mW (Tc)
封装:Tape & Reel (TR)
封裝/箱體:4-XFBGA
其他名稱:SI8823EDB-T2-E1TR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:46 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:580pF @ 10V
柵極電荷(Qg)(Max)@ Vgs:10nC @ 4.5V
FET型:P-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):1.5V, 4.5V
漏極至源極電壓(Vdss):20V
詳細說明:P-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8)
電流 - 25°C連續排水(Id):2.7A (Tc)
Email:[email protected]

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