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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > TK5Q60W,S1VQ
TK5Q60W,S1VQ
TK5Q60W,S1VQ
Artikelnummer:
TK5Q60W,S1VQ
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N CH 600V 5.4A IPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
24558 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TK5Q60W,S1VQ.pdf
Anfrage

Einführung

We can supply TK5Q60W,S1VQ, use the request quote form to request TK5Q60W,S1VQ pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK5Q60W,S1VQ.The price and lead time for TK5Q60W,S1VQ depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK5Q60W,S1VQ.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.7V @ 270µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:I-PAK
Serie:DTMOSIV
Rds On (Max) @ Id, Vgs:900 mOhm @ 2.7A, 10V
Verlustleistung (max):60W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3 Stub Leads, IPak
Andere Namen:TK5Q60W,S1VQ(S
TK5Q60WS1VQ
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:380pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:10.5nC @ 10V
Typ FET:N-Channel
FET-Merkmal:Super Junction
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 5.4A (Ta) 60W (Tc) Through Hole I-PAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5.4A (Ta)
Email:[email protected]

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