TK5A60D(STA4,Q,M)
TK5A60D(STA4,Q,M)
Artikelnummer:
TK5A60D(STA4,Q,M)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 600V 5A TO-220SIS
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
63943 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TK5A60D(STA4,Q,M).pdf

Einführung

We can supply TK5A60D(STA4,Q,M), use the request quote form to request TK5A60D(STA4,Q,M) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK5A60D(STA4,Q,M).The price and lead time for TK5A60D(STA4,Q,M) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK5A60D(STA4,Q,M).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.4V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220SIS
Serie:π-MOSVII
Rds On (Max) @ Id, Vgs:1.43 Ohm @ 2.5A, 10V
Verlustleistung (max):35W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3 Full Pack
Andere Namen:TK5A60D(STA4QM)
TK5A60DSTA4QM
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 5A (Ta) 35W (Tc) Through Hole TO-220SIS
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5A (Ta)
Email:[email protected]

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