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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > TK5Q65W,S1Q
TK5Q65W,S1Q
TK5Q65W,S1Q
Artikelnummer:
TK5Q65W,S1Q
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 650V 5.2A IPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
22680 Pieces
Lieferzeit:
1-2 days
Datenblatt:
TK5Q65W,S1Q.pdf
Anfrage

Einführung

We can supply TK5Q65W,S1Q, use the request quote form to request TK5Q65W,S1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK5Q65W,S1Q.The price and lead time for TK5Q65W,S1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK5Q65W,S1Q.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3.5V @ 170µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:I-PAK
Serie:DTMOSIV
Rds On (Max) @ Id, Vgs:1.22 Ohm @ 2.6A, 10V
Verlustleistung (max):60W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3 Stub Leads, IPak
Andere Namen:TK5Q65W,S1Q(S
TK5Q65WS1Q
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:380pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:10.5nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 5.2A (Ta) 60W (Tc) Through Hole I-PAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5.2A (Ta)
Email:[email protected]

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