SIZ980DT-T1-GE3
SIZ980DT-T1-GE3
Artikelnummer:
SIZ980DT-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET 2 N-CH 30V 8-POWERPAIR
verfügbare Anzahl:
76093 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIZ980DT-T1-GE3.pdf

Einführung

We can supply SIZ980DT-T1-GE3, use the request quote form to request SIZ980DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ980DT-T1-GE3.The price and lead time for SIZ980DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ980DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.2V @ 250µA
Supplier Device-Gehäuse:8-PowerPair®
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V
Leistung - max:20W, 66W
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-PowerWDFN
Andere Namen:SIZ980DT-T1-GE3CT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Eingabekapazität (Ciss) (Max) @ Vds:930pF @ 15V, 4600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:8.1nC @ 4.5V, 35nC @ 4.5V
Typ FET:2 N-Channel (Dual), Schottky
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20W, 66W Surface Mount 8-PowerPair®
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Tc), 60A (Tc)
Email:[email protected]

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