Bedingung |
New & Unused, Original Packing |
Ursprung |
Contact us |
VGS (th) (Max) @ Id: | 2.2V @ 250µA |
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Supplier Device-Gehäuse: | 8-PowerPair® (6x5) |
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Serie: | TrenchFET® Gen IV |
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Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V |
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Leistung - max: | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) |
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Verpackung: | Tape & Reel (TR) |
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Verpackung / Gehäuse: | 8-PowerWDFN |
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Andere Namen: | SIZF906ADT-T1-GE3TR |
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Betriebstemperatur: | -55°C ~ 150°C (TJ) |
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Befestigungsart: | Surface Mount |
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Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
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Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
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Eingabekapazität (Ciss) (Max) @ Vds: | 2000pF @ 15V, 8200pF @ 15V |
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Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V, 200nC @ 10V |
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Typ FET: | 2 N-Channel (Dual), Schottky |
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FET-Merkmal: | Standard |
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Drain-Source-Spannung (Vdss): | 30V |
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detaillierte Beschreibung: | Mosfet Array 2 N-Channel (Dual), Schottky 30V 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Surface Mount 8-PowerPair® (6x5) |
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Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) |
Email: | [email protected] |