Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
VGS (th) (Max) @ Id: | 2.4V @ 250µA, 2.2V @ 250µA |
Supplier Device-Gehäuse: | 8-PowerPair® (6x5) |
Serie: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V |
Leistung - max: | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 8-PowerWDFN |
Andere Namen: | SIZF916DT-T1-GE3TR |
Betriebstemperatur: | -55°C ~ 150°C (TJ) |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Hersteller Standard Vorlaufzeit: | 32 Weeks |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 1060pF @ 15V, 4320pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V, 95nC @ 10V |
Typ FET: | 2 N-Channel (Dual) |
FET-Merkmal: | Standard |
Drain-Source-Spannung (Vdss): | 30V |
detaillierte Beschreibung: | Mosfet Array 2 N-Channel (Dual) 30V 23A (Ta), 40A (Tc) 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Surface Mount 8-PowerPair® (6x5) |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 23A (Ta), 40A (Tc) |
Email: | [email protected] |