SIZ980DT-T1-GE3
SIZ980DT-T1-GE3
Modello di prodotti:
SIZ980DT-T1-GE3
fabbricante:
Electro-Films (EFI) / Vishay
Descrizione:
MOSFET 2 N-CH 30V 8-POWERPAIR
quantità disponibile:
76093 Pieces
Tempo di consegna:
1-2 days
Scheda dati:
SIZ980DT-T1-GE3.pdf

introduzione

We can supply SIZ980DT-T1-GE3, use the request quote form to request SIZ980DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ980DT-T1-GE3.The price and lead time for SIZ980DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ980DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Condizione New & Unused, Original Packing
Origine Contact us
Vgs (th) (max) a Id:2.2V @ 250µA
Contenitore dispositivo fornitore:8-PowerPair®
Serie:TrenchFET®
Rds On (max) a Id, Vgs:6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V
Potenza - Max:20W, 66W
imballaggio:Cut Tape (CT)
Contenitore / involucro:8-PowerWDFN
Altri nomi:SIZ980DT-T1-GE3CT
temperatura di esercizio:-55°C ~ 150°C (TJ)
Tipo montaggio:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Produttore tempi di consegna standard:32 Weeks
Capacità di ingresso (Ciss) (Max) @ Vds:930pF @ 15V, 4600pF @ 15V
Carica Gate (Qg) (Max) @ Vgs:8.1nC @ 4.5V, 35nC @ 4.5V
Tipo FET:2 N-Channel (Dual), Schottky
Caratteristica FET:Standard
Tensione drain-source (Vdss):30V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A (Tc), 60A (Tc) 20W, 66W Surface Mount 8-PowerPair®
Corrente - Drain continuo (Id) @ 25 ° C:20A (Tc), 60A (Tc)
Email:[email protected]

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