SIZ300DT-T1-GE3
SIZ300DT-T1-GE3
Artikelnummer:
SIZ300DT-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET 2N-CH 30V 11A POWERPAIR
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
51859 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIZ300DT-T1-GE3.pdf

Einführung

We can supply SIZ300DT-T1-GE3, use the request quote form to request SIZ300DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ300DT-T1-GE3.The price and lead time for SIZ300DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ300DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.4V @ 250µA
Supplier Device-Gehäuse:8-PowerPair®
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:24 mOhm @ 9.8A, 10V
Leistung - max:16.7W, 31W
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-PowerWDFN
Andere Namen:SIZ300DT-T1-GE3DKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Typ FET:2 N-Channel (Half Bridge)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Half Bridge) 30V 11A, 28A 16.7W, 31W Surface Mount 8-PowerPair®
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11A, 28A
Basisteilenummer:SIZ300
Email:[email protected]

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