SIZ300DT-T1-GE3
SIZ300DT-T1-GE3
Modèle de produit:
SIZ300DT-T1-GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET 2N-CH 30V 11A POWERPAIR
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
51859 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SIZ300DT-T1-GE3.pdf

introduction

We can supply SIZ300DT-T1-GE3, use the request quote form to request SIZ300DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ300DT-T1-GE3.The price and lead time for SIZ300DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ300DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.4V @ 250µA
Package composant fournisseur:8-PowerPair®
Séries:TrenchFET®
Rds On (Max) @ Id, Vgs:24 mOhm @ 9.8A, 10V
Puissance - Max:16.7W, 31W
Emballage:Original-Reel®
Package / Boîte:8-PowerWDFN
Autres noms:SIZ300DT-T1-GE3DKR
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:400pF @ 15V
Charge de la porte (Qg) (Max) @ Vgs:12nC @ 10V
type de FET:2 N-Channel (Half Bridge)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):30V
Description détaillée:Mosfet Array 2 N-Channel (Half Bridge) 30V 11A, 28A 16.7W, 31W Surface Mount 8-PowerPair®
Courant - Drainage continu (Id) à 25 ° C:11A, 28A
Numéro de pièce de base:SIZ300
Email:[email protected]

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