SIZ300DT-T1-GE3
SIZ300DT-T1-GE3
型號:
SIZ300DT-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2N-CH 30V 11A POWERPAIR
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
51859 Pieces
發貨時間:
1-2 days
數據表:
SIZ300DT-T1-GE3.pdf

簡單介紹

We can supply SIZ300DT-T1-GE3, use the request quote form to request SIZ300DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ300DT-T1-GE3.The price and lead time for SIZ300DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ300DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:2.4V @ 250µA
供應商設備封裝:8-PowerPair®
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:24 mOhm @ 9.8A, 10V
功率 - 最大:16.7W, 31W
封装:Original-Reel®
封裝/箱體:8-PowerWDFN
其他名稱:SIZ300DT-T1-GE3DKR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:400pF @ 15V
柵極電荷(Qg)(Max)@ Vgs:12nC @ 10V
FET型:2 N-Channel (Half Bridge)
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):30V
詳細說明:Mosfet Array 2 N-Channel (Half Bridge) 30V 11A, 28A 16.7W, 31W Surface Mount 8-PowerPair®
電流 - 25°C連續排水(Id):11A, 28A
基礎部件號:SIZ300
Email:[email protected]

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