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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > DMG8880LSS-13
DMG8880LSS-13
DMG8880LSS-13
Artikelnummer:
DMG8880LSS-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N-CH 30V 11.6A 8SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
34354 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMG8880LSS-13.pdf
Anfrage

Einführung

We can supply DMG8880LSS-13, use the request quote form to request DMG8880LSS-13 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG8880LSS-13.The price and lead time for DMG8880LSS-13 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG8880LSS-13.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SOP
Serie:-
Rds On (Max) @ Id, Vgs:10 mOhm @ 11.6A, 10V
Verlustleistung (max):1.43W (Ta)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:1034-DMG8880LSS-13DICT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1289pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:27.6nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 11.6A (Ta) 1.43W (Ta) Surface Mount 8-SOP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11.6A (Ta)
Email:[email protected]

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