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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > DMG7N65SJ3
DMG7N65SJ3
Artikelnummer:
DMG7N65SJ3
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET BVDSS: 501V 650V TO251
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS-konform
verfügbare Anzahl:
28122 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMG7N65SJ3.pdf
Anfrage

Einführung

We can supply DMG7N65SJ3, use the request quote form to request DMG7N65SJ3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG7N65SJ3.The price and lead time for DMG7N65SJ3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG7N65SJ3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-251
Serie:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:1.4 Ohm @ 2.5A, 10V
Verlustleistung (max):125W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3, IPak, Short Leads
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Hersteller Standard Vorlaufzeit:22 Weeks
Bleifreier Status / RoHS-Status:Contains lead / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:886pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 5.5A (Tc) 125W (Tc) Through Hole TO-251
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5.5A (Tc)
Email:[email protected]

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