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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > DMG7N65SJ3
DMG7N65SJ3
Part Number:
DMG7N65SJ3
Výrobce:
Diodes Incorporated
Popis:
MOSFET BVDSS: 501V 650V TO251
Stav volného vedení / RoHS:
Obsahuje olovo a RoHS
dostupné množství:
28122 Pieces
Čas doručení:
1-2 days
Datový list:
DMG7N65SJ3.pdf
Dotaz

Úvod

We can supply DMG7N65SJ3, use the request quote form to request DMG7N65SJ3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG7N65SJ3.The price and lead time for DMG7N65SJ3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG7N65SJ3.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4V @ 250µA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-251
Série:Automotive, AEC-Q101
RDS On (Max) @ Id, Vgs:1.4 Ohm @ 2.5A, 10V
Ztráta energie (Max):125W (Tc)
Obal:Tube
Paket / krabice:TO-251-3, IPak, Short Leads
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Through Hole
Výrobní standardní doba výroby:22 Weeks
Stav volného vedení / RoHS:Contains lead / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:886pF @ 50V
Nabíjení brány (Qg) (Max) @ Vgs:25nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):650V
Detailní popis:N-Channel 650V 5.5A (Tc) 125W (Tc) Through Hole TO-251
Proud - kontinuální odtok (Id) @ 25 ° C:5.5A (Tc)
Email:[email protected]

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