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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Arrays > DMG8601UFG-7
DMG8601UFG-7
DMG8601UFG-7
Artikelnummer:
DMG8601UFG-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 2N-CH 20V 6.1A DFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
77531 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMG8601UFG-7.pdf
Anfrage

Einführung

We can supply DMG8601UFG-7, use the request quote form to request DMG8601UFG-7 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG8601UFG-7.The price and lead time for DMG8601UFG-7 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG8601UFG-7.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1.05V @ 250µA
Supplier Device-Gehäuse:U-DFN3030-8
Serie:-
Rds On (Max) @ Id, Vgs:23 mOhm @ 6.5A, 4.5V
Leistung - max:920mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerUDFN
Andere Namen:DMG8601UFG-7DITR
DMG8601UFG7
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:20 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:143pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 4.5V
Typ FET:2 N-Channel (Dual) Common Drain
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6.1A 920mW Surface Mount U-DFN3030-8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6.1A
Basisteilenummer:DMG8601UFG
Email:[email protected]

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