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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Arrays > DMG8822UTS-13
DMG8822UTS-13
Artikelnummer:
DMG8822UTS-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 2N-CH 20V 4.9A 8TSSOP
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
61264 Pieces
Lieferzeit:
1-2 days
Datenblatt:
DMG8822UTS-13.pdf
Anfrage

Einführung

We can supply DMG8822UTS-13, use the request quote form to request DMG8822UTS-13 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG8822UTS-13.The price and lead time for DMG8822UTS-13 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG8822UTS-13.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:900mV @ 250µA
Supplier Device-Gehäuse:8-TSSOP
Serie:Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:25 mOhm @ 8.2A, 4.5V
Leistung - max:870mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-TSSOP (0.173", 4.40mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:841pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:9.6nC @ 4.5V
Typ FET:2 N-Channel (Dual) Common Drain
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Common Drain 20V 4.9A (Ta) 870mW Surface Mount 8-TSSOP
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4.9A (Ta)
Email:[email protected]

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