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SI3460BDV-T1-GE3
- Part Number:
- SI3460BDV-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 20V 8A 6-TSOP
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 5218 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- SI3460BDV-T1-GE3.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Voltage - Test: | 860pF @ 10V |
| Voltage - Breakdown: | 6-TSOP |
| Vgs(th) (Max) @ Id: | 27 mOhm @ 5.1A, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 8A (Tc) |
| Polarization: | SOT-23-6 Thin, TSOT-23-6 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 15 Weeks |
| Manufacturer Part Number: | SI3460BDV-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 24nC @ 8V |
| Gate Charge (Qg) (Max) @ Vgs: | 1V @ 250µA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 20V 8A 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C: | 20V |
| Capacitance Ratio: | 2W (Ta), 3.5W (Tc) |
| Email: | [email protected] |
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