SI3460BDV-T1-GE3
SI3460BDV-T1-GE3
Onderdeel nummer:
SI3460BDV-T1-GE3
Fabrikant:
Vishay / Siliconix
Beschrijving:
MOSFET N-CH 20V 8A 6-TSOP
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
5218 Pieces
Aflevertijd:
1-2 days
Data papier:
SI3460BDV-T1-GE3.pdf

Invoering

We can supply SI3460BDV-T1-GE3, use the request quote form to request SI3460BDV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3460BDV-T1-GE3.The price and lead time for SI3460BDV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3460BDV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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Voltage - Test:860pF @ 10V
Voltage - Breakdown:6-TSOP
VGS (th) (Max) @ Id:27 mOhm @ 5.1A, 4.5V
Technologie:MOSFET (Metal Oxide)
Serie:TrenchFET®
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, VGS:8A (Tc)
Polarisatie:SOT-23-6 Thin, TSOT-23-6
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:15 Weeks
Fabrikant Onderdeelnummer:SI3460BDV-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:24nC @ 8V
Gate Charge (Qg) (Max) @ Vgs:1V @ 250µA
FET Feature:N-Channel
Uitgebreide beschrijving:N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
Drain naar de Bron Voltage (Vdss):-
Beschrijving:MOSFET N-CH 20V 8A 6-TSOP
Current - Continuous Drain (Id) @ 25 ° C:20V
capacitieve Ratio:2W (Ta), 3.5W (Tc)
Email:[email protected]

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