Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
Voltage - Test: | 860pF @ 10V |
Voltage - Breakdown: | 6-TSOP |
VGS (th) (Max) @ Id: | 27 mOhm @ 5.1A, 4.5V |
Technologie: | MOSFET (Metal Oxide) |
Serie: | TrenchFET® |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, VGS: | 8A (Tc) |
Polarisatie: | SOT-23-6 Thin, TSOT-23-6 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 15 Weeks |
Fabrikant Onderdeelnummer: | SI3460BDV-T1-GE3 |
Input Capacitance (Ciss) (Max) @ Vds: | 24nC @ 8V |
Gate Charge (Qg) (Max) @ Vgs: | 1V @ 250µA |
FET Feature: | N-Channel |
Uitgebreide beschrijving: | N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP |
Drain naar de Bron Voltage (Vdss): | - |
Beschrijving: | MOSFET N-CH 20V 8A 6-TSOP |
Current - Continuous Drain (Id) @ 25 ° C: | 20V |
capacitieve Ratio: | 2W (Ta), 3.5W (Tc) |
Email: | [email protected] |