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SI3460DV-T1-E3
- Part Number:
- SI3460DV-T1-E3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET N-CH 20V 5.1A 6TSOP
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 73128 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- SI3460DV-T1-E3.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 450mV @ 1mA (Min) |
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 6-TSOP |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 27 mOhm @ 5.1A, 4.5V |
| Power Dissipation (Max): | 1.1W (Ta) |
| Packaging: | Original-Reel® |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Other Names: | SI3460DV-T1-E3DKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C: | 5.1A (Ta) |
| Email: | [email protected] |
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