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TK12A60W,S4VX
- Part Number:
- TK12A60W,S4VX
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- MOSFET N CH 600V 11.5A TO-220SIS
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 30623 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- TK12A60W,S4VX.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 3.7V @ 600µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220SIS |
| Series: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 5.8A, 10V |
| Power Dissipation (Max): | 35W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 Full Pack |
| Other Names: | TK12A60W,S4VX(M TK12A60WS4VX |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 890pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | Super Junction |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Detailed Description: | N-Channel 600V 11.5A (Ta) 35W (Tc) Through Hole TO-220SIS |
| Current - Continuous Drain (Id) @ 25°C: | 11.5A (Ta) |
| Email: | [email protected] |
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