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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK12A60U(Q,M)
TK12A60U(Q,M)
TK12A60U(Q,M)
Part Number:
TK12A60U(Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 600V 12A TO220SIS
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
56365 Pieces
Delivery Time:
1-2 days
Data sheet:
1.TK12A60U(Q,M).pdf2.TK12A60U(Q,M).pdf
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Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220SIS
Series:DTMOSII
Rds On (Max) @ Id, Vgs:400 mOhm @ 6A, 10V
Power Dissipation (Max):35W (Tc)
Packaging:Tube
Package / Case:TO-220-3 Full Pack
Other Names:TK12A60U(Q)
TK12A60U(Q)-ND
TK12A60U(QM)
TK12A60UQ-ND
TK12A60UQM
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:720pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 12A (Ta) 35W (Tc) Through Hole TO-220SIS
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Email:[email protected]

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