EMD30T2R
EMD30T2R
Part Number:
EMD30T2R
Manufacturer:
LAPIS Semiconductor
Description:
TRANS NPN/PNP PREBIAS 0.15W EMT6
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
49738 Pieces
Delivery Time:
1-2 days
Data sheet:
EMD30T2R.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Voltage - Collector Emitter Breakdown (Max):50V, 30V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:EMT6
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):10 kOhms, 1 kOhms
Power - Max:150mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:EMD30T2R-ND
EMD30T2RTR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz, 260MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 30V 100mA, 200mA 250MHz, 260MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 140 @ 100mA, 2V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA, 200mA
Base Part Number:*MD30
Email:[email protected]

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