Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
Spanning - Collector Emitter Breakdown (Max): | 50V, 30V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Leverancier Device Pakket: | EMT6 |
Serie: | - |
Weerstand - emitterbasis (R2): | 10 kOhms |
Weerstand - basis (R1): | 10 kOhms, 1 kOhms |
Vermogen - Max: | 150mW |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | SOT-563, SOT-666 |
Andere namen: | EMD30T2R-ND EMD30T2RTR |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Frequentie - Transition: | 250MHz, 260MHz |
gedetailleerde beschrijving: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 30V 100mA, 200mA 250MHz, 260MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Current - Collector Cutoff (Max): | 500nA |
Current - Collector (Ic) (Max): | 100mA, 200mA |
Base Part Number: | *MD30 |
Email: | [email protected] |