SI4590DY-T1-GE3
Artikelnummer:
SI4590DY-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N/P CHAN 100V SO8 DUAL
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
65044 Pieces
Leveranstid:
1-2 days
Datablad:
SI4590DY-T1-GE3.pdf

Introduktion

We can supply SI4590DY-T1-GE3, use the request quote form to request SI4590DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4590DY-T1-GE3.The price and lead time for SI4590DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4590DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:2.5V @ 250µA
Leverantörs Device Package:8-SO
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:57 mOhm @ 2A, 10V
Effekt - Max:2.4W, 3.4W
Förpackning:Original-Reel®
Förpackning / Fodral:8-SOIC (0.154", 3.90mm Width)
Andra namn:SI4590DY-T1-GE3DKR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:33 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:360pF @ 50V
Gate Laddning (Qg) (Max) @ Vgs:11.5nC @ 10V
FET-typ:N and P-Channel
FET-funktionen:-
Avlopp till källspänning (Vdss):100V
detaljerad beskrivning:Mosfet Array N and P-Channel 100V 3.4A, 2.8A 2.4W, 3.4W Surface Mount 8-SO
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:3.4A, 2.8A
Email:[email protected]

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