SI4590DY-T1-GE3
Onderdeel nummer:
SI4590DY-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N/P CHAN 100V SO8 DUAL
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
65044 Pieces
Aflevertijd:
1-2 days
Data papier:
SI4590DY-T1-GE3.pdf

Invoering

We can supply SI4590DY-T1-GE3, use the request quote form to request SI4590DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4590DY-T1-GE3.The price and lead time for SI4590DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4590DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Leverancier Device Pakket:8-SO
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:57 mOhm @ 2A, 10V
Vermogen - Max:2.4W, 3.4W
Packaging:Original-Reel®
Verpakking / doos:8-SOIC (0.154", 3.90mm Width)
Andere namen:SI4590DY-T1-GE3DKR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:33 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:360pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:11.5nC @ 10V
FET Type:N and P-Channel
FET Feature:-
Drain naar de Bron Voltage (Vdss):100V
gedetailleerde beschrijving:Mosfet Array N and P-Channel 100V 3.4A, 2.8A 2.4W, 3.4W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:3.4A, 2.8A
Email:[email protected]

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