SI4599DY-T1-GE3
Artikelnummer:
SI4599DY-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N/P-CH 40V 6.8A 8SOIC
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
70657 Pieces
Leveranstid:
1-2 days
Datablad:
SI4599DY-T1-GE3.pdf

Introduktion

We can supply SI4599DY-T1-GE3, use the request quote form to request SI4599DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4599DY-T1-GE3.The price and lead time for SI4599DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4599DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Leverantörs Device Package:8-SO
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:35.5 mOhm @ 5A, 10V
Effekt - Max:3W, 3.1W
Förpackning:Cut Tape (CT)
Förpackning / Fodral:8-SOIC (0.154", 3.90mm Width)
Andra namn:SI4599DY-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:640pF @ 20V
Gate Laddning (Qg) (Max) @ Vgs:20nC @ 10V
FET-typ:N and P-Channel
FET-funktionen:Logic Level Gate
Avlopp till källspänning (Vdss):40V
detaljerad beskrivning:Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SO
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:6.8A, 5.8A
Bas-delenummer:SI4599
Email:[email protected]

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