SI4599DY-T1-GE3
Varenummer:
SI4599DY-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N/P-CH 40V 6.8A 8SOIC
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
70657 Pieces
Leveringstid:
1-2 days
Datablad:
SI4599DY-T1-GE3.pdf

Introduktion

We can supply SI4599DY-T1-GE3, use the request quote form to request SI4599DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4599DY-T1-GE3.The price and lead time for SI4599DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4599DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:3V @ 250µA
Leverandør Device Package:8-SO
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:35.5 mOhm @ 5A, 10V
Strøm - Max:3W, 3.1W
Emballage:Cut Tape (CT)
Pakke / tilfælde:8-SOIC (0.154", 3.90mm Width)
Andre navne:SI4599DY-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Type:N and P-Channel
FET-funktion:Logic Level Gate
Afløb til Source Voltage (VDSS):40V
Detaljeret beskrivelse:Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SO
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:6.8A, 5.8A
Basenummer:SI4599
Email:[email protected]

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