TPW4R008NH,L1Q
TPW4R008NH,L1Q
Onderdeel nummer:
TPW4R008NH,L1Q
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
MOSFET N-CH 80V 116A 8DSOP
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
13445 Pieces
Aflevertijd:
1-2 days
Data papier:
TPW4R008NH,L1Q.pdf

Invoering

We can supply TPW4R008NH,L1Q, use the request quote form to request TPW4R008NH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPW4R008NH,L1Q.The price and lead time for TPW4R008NH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPW4R008NH,L1Q.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:8-DSOP Advance
Serie:U-MOSVIII-H
Rds On (Max) @ Id, VGS:4 mOhm @ 50A, 10V
Vermogensverlies (Max):800mW (Ta), 142W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:8-PowerVDFN
Andere namen:TPW4R008NH,L1Q(M
TPW4R008NHL1QTR
Temperatuur:150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5300pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:59nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):80V
gedetailleerde beschrijving:N-Channel 80V 116A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Current - Continuous Drain (Id) @ 25 ° C:116A (Tc)
Email:[email protected]

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