Français
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Kongeriket Dansk Svenska Hrvatska✕
À propos de nous | Nous contacter | Demander un devis |
Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - Single > TPW4R008NH,L1Q
TPW4R008NH,L1Q
TPW4R008NH,L1Q
Modèle de produit:
TPW4R008NH,L1Q
Fabricant:
Toshiba Semiconductor and Storage
La description:
MOSFET N-CH 80V 116A 8DSOP
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
13445 Pieces
Heure de livraison:
1-2 days
Fiche technique:
TPW4R008NH,L1Q.pdf
Enquête

introduction

We can supply TPW4R008NH,L1Q, use the request quote form to request TPW4R008NH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPW4R008NH,L1Q.The price and lead time for TPW4R008NH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPW4R008NH,L1Q.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:8-DSOP Advance
Séries:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:4 mOhm @ 50A, 10V
Dissipation de puissance (max):800mW (Ta), 142W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:8-PowerVDFN
Autres noms:TPW4R008NH,L1Q(M
TPW4R008NHL1QTR
Température de fonctionnement:150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:5300pF @ 40V
Charge de la porte (Qg) (Max) @ Vgs:59nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):80V
Description détaillée:N-Channel 80V 116A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Courant - Drainage continu (Id) à 25 ° C:116A (Tc)
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes

pièces connexes TPW4R008NH,L1Q

image Modèle de produit Fabricant La description Vue
TPWDS-BBM-3 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPW-225 Bussmann (Eaton) FUSE RECT 225A 80VDC BLADE Enquête
TPWDS-BSM-1 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPW1R005PL,L1Q Image TPW1R005PL,L1Q Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR Enquête
TPWDS-BSM-3 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPWDS-BBE-2 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPW-175 Bussmann (Eaton) FUSE RECT 175A 80VDC BLADE Enquête
TPW-250 Bussmann (Eaton) FUSE RECT 250A 80VDC BLADE Enquête
TPWDS-BBM-1 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPWDS-BBE-3 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPW1R306PL,L1Q Image TPW1R306PL,L1Q Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR Enquête
TPW4R50ANH,L1Q Image TPW4R50ANH,L1Q Toshiba Semiconductor and Storage MOSFET N-CH 100V 92A 8DSOP Enquête
TPWDS-BSE-3 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPWDS-BBE-1 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPWDS-BSE-1 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPW-200 Bussmann (Eaton) FUSE RECT 200A 80VDC BLADE Enquête
TPW-150 Bussmann (Eaton) FUSE RECT 150A 80VDC BLADE Enquête
TPWDS-BSM-2 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPWDS-BBM-2 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête
TPWDS-BSE-2 Bussmann (Eaton) SWITCH DISCONNECT 150-250A 80VDC Enquête

Latest Nouvelles