TPW4R008NH,L1Q
TPW4R008NH,L1Q
Varenummer:
TPW4R008NH,L1Q
Fabrikant:
Toshiba Semiconductor and Storage
Beskrivelse:
MOSFET N-CH 80V 116A 8DSOP
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
13445 Pieces
Leveringstid:
1-2 days
Datablad:
TPW4R008NH,L1Q.pdf

Introduktion

We can supply TPW4R008NH,L1Q, use the request quote form to request TPW4R008NH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPW4R008NH,L1Q.The price and lead time for TPW4R008NH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPW4R008NH,L1Q.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:8-DSOP Advance
Serie:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:4 mOhm @ 50A, 10V
Power Dissipation (Max):800mW (Ta), 142W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:8-PowerVDFN
Andre navne:TPW4R008NH,L1Q(M
TPW4R008NHL1QTR
Driftstemperatur:150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:5300pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:59nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):80V
Detaljeret beskrivelse:N-Channel 80V 116A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:116A (Tc)
Email:[email protected]

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