TPW4R50ANH,L1Q
TPW4R50ANH,L1Q
Onderdeel nummer:
TPW4R50ANH,L1Q
Fabrikant:
Toshiba Semiconductor and Storage
Beschrijving:
MOSFET N-CH 100V 92A 8DSOP
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
6792 Pieces
Aflevertijd:
1-2 days
Data papier:
TPW4R50ANH,L1Q.pdf

Invoering

We can supply TPW4R50ANH,L1Q, use the request quote form to request TPW4R50ANH,L1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPW4R50ANH,L1Q.The price and lead time for TPW4R50ANH,L1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPW4R50ANH,L1Q.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:8-DSOP Advance
Serie:U-MOSVIII-H
Rds On (Max) @ Id, VGS:4.5 mOhm @ 46A, 10V
Vermogensverlies (Max):800mW (Ta), 142W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:8-PowerVDFN
Andere namen:TPW4R50ANH,L1Q(M
TPW4R50ANHL1QTR
Temperatuur:150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5200pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):100V
gedetailleerde beschrijving:N-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Current - Continuous Drain (Id) @ 25 ° C:92A (Tc)
Email:[email protected]

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