SIA777EDJ-T1-GE3
SIA777EDJ-T1-GE3
Modèle de produit:
SIA777EDJ-T1-GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET N/P-CH 20V/12V SC70-6L
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
30612 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SIA777EDJ-T1-GE3.pdf

introduction

We can supply SIA777EDJ-T1-GE3, use the request quote form to request SIA777EDJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA777EDJ-T1-GE3.The price and lead time for SIA777EDJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA777EDJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Package composant fournisseur:PowerPAK® SC-70-6 Dual
Séries:TrenchFET®
Rds On (Max) @ Id, Vgs:225 mOhm @ 1.6A, 4.5V
Puissance - Max:5W, 7.8W
Emballage:Tape & Reel (TR)
Package / Boîte:PowerPAK® SC-70-6 Dual
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:15 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:-
Charge de la porte (Qg) (Max) @ Vgs:2.2nC @ 5V
type de FET:N and P-Channel
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):20V, 12V
Description détaillée:Mosfet Array N and P-Channel 20V, 12V 1.5A, 4.5A 5W, 7.8W Surface Mount PowerPAK® SC-70-6 Dual
Courant - Drainage continu (Id) à 25 ° C:1.5A, 4.5A
Email:[email protected]

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