SIA485DJ-T1-GE3
SIA485DJ-T1-GE3
Modèle de produit:
SIA485DJ-T1-GE3
Fabricant:
Electro-Films (EFI) / Vishay
La description:
MOSFET P-CHANNEL 150V 1.6A
quantité disponible:
60052 Pieces
Heure de livraison:
1-2 days
Fiche technique:
SIA485DJ-T1-GE3.pdf

introduction

We can supply SIA485DJ-T1-GE3, use the request quote form to request SIA485DJ-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIA485DJ-T1-GE3.The price and lead time for SIA485DJ-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIA485DJ-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:PowerPAK® SC-70-6 Single
Séries:-
Rds On (Max) @ Id, Vgs:2.6 Ohm @ 500mA, 10V
Dissipation de puissance (max):15.6W (Tc)
Emballage:Tape & Reel (TR)
Package / Boîte:PowerPAK® SC-70-6
Autres noms:SIA485DJ-T1-GE3-ND
SIA485DJ-T1-GE3TR
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:22 Weeks
Capacité d'entrée (Ciss) (Max) @ Vds:155pF @ 75V
Charge de la porte (Qg) (Max) @ Vgs:6.3nC @ 10V
type de FET:P-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):6V, 10V
Tension drain-source (Vdss):150V
Description détaillée:P-Channel 150V 1.6A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Courant - Drainage continu (Id) à 25 ° C:1.6A (Tc)
Email:[email protected]

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