RN1118MFV,L3F
Modèle de produit:
RN1118MFV,L3F
Fabricant:
Toshiba Semiconductor and Storage
La description:
X34 PB-F VESM TRANSISTOR PD 150M
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
58699 Pieces
Heure de livraison:
1-2 days
Fiche technique:
RN1118MFV,L3F.pdf

introduction

We can supply RN1118MFV,L3F, use the request quote form to request RN1118MFV,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1118MFV,L3F.The price and lead time for RN1118MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1118MFV,L3F.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:NPN - Pre-Biased
Package composant fournisseur:VESM
Séries:-
Résistance - Base de l'émetteur (R2):10 kOhms
Résistance - Base (R1):47 kOhms
Puissance - Max:150mW
Package / Boîte:SOT-723
Autres noms:RN1118MFVL3F
Type de montage:Surface Mount
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:250MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
Gain en courant DC (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):100mA
Email:[email protected]

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