RN1118MFV,L3F
型號:
RN1118MFV,L3F
製造商:
Toshiba Semiconductor and Storage
描述:
X34 PB-F VESM TRANSISTOR PD 150M
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
58699 Pieces
發貨時間:
1-2 days
數據表:
RN1118MFV,L3F.pdf

簡單介紹

We can supply RN1118MFV,L3F, use the request quote form to request RN1118MFV,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1118MFV,L3F.The price and lead time for RN1118MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1118MFV,L3F.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
電壓 - 集電極發射極擊穿(最大):50V
Vce飽和(最大)@ IB,IC:300mV @ 250µA, 5mA
晶體管類型:NPN - Pre-Biased
供應商設備封裝:VESM
系列:-
電阻器 - 發射器底座(R2):10 kOhms
電阻器 - 基座(R1):47 kOhms
功率 - 最大:150mW
封裝/箱體:SOT-723
其他名稱:RN1118MFVL3F
安裝類型:Surface Mount
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
頻率 - 轉換:250MHz
詳細說明:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
直流電流增益(HFE)(最小值)@ IC,的Vce:50 @ 10mA, 5V
電流 - 集電極截止(最大):500nA
電流 - 集電極(Ic)(最大):100mA
Email:[email protected]

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