APTMC120AM25CT3AG
APTMC120AM25CT3AG
Modèle de produit:
APTMC120AM25CT3AG
Fabricant:
Microsemi
La description:
MOSFET 2N-CH 1200V 105A SP3F
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
12687 Pieces
Heure de livraison:
1-2 days
Fiche technique:
APTMC120AM25CT3AG.pdf

introduction

We can supply APTMC120AM25CT3AG, use the request quote form to request APTMC120AM25CT3AG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTMC120AM25CT3AG.The price and lead time for APTMC120AM25CT3AG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTMC120AM25CT3AG.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:2.2V @ 4mA (Typ)
Package composant fournisseur:SP3
Séries:-
Rds On (Max) @ Id, Vgs:25 mOhm @ 80A, 20V
Puissance - Max:500W
Emballage:Bulk
Package / Boîte:SP3
Température de fonctionnement:-40°C ~ 150°C (TJ)
Type de montage:Chassis Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:32 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:3800pF @ 1000V
Charge de la porte (Qg) (Max) @ Vgs:197nC @ 20V
type de FET:2 N-Channel (Half Bridge)
Fonction FET:Silicon Carbide (SiC)
Tension drain-source (Vdss):1200V (1.2kV)
Description détaillée:Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 113A (Tc) 500W Chassis Mount SP3
Courant - Drainage continu (Id) à 25 ° C:113A (Tc)
Email:[email protected]

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