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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - tableaux > APTM60H23FT1G
APTM60H23FT1G
Modèle de produit:
APTM60H23FT1G
Fabricant:
Microsemi
La description:
MOSFET 4N-CH 600V 20A SP1
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
69664 Pieces
Heure de livraison:
1-2 days
Fiche technique:
1.APTM60H23FT1G.pdf2.APTM60H23FT1G.pdf
Enquête

introduction

We can supply APTM60H23FT1G, use the request quote form to request APTM60H23FT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM60H23FT1G.The price and lead time for APTM60H23FT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM60H23FT1G.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:5V @ 1mA
Package composant fournisseur:SP1
Séries:-
Rds On (Max) @ Id, Vgs:276 mOhm @ 17A, 10V
Puissance - Max:208W
Emballage:Bulk
Package / Boîte:SP1
Autres noms:APTM60H23UT1G
APTM60H23UT1G-ND
Température de fonctionnement:-40°C ~ 150°C (TJ)
Type de montage:Chassis Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:32 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:5316pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:165nC @ 10V
type de FET:4 N-Channel (H-Bridge)
Fonction FET:Standard
Tension drain-source (Vdss):600V
Description détaillée:Mosfet Array 4 N-Channel (H-Bridge) 600V 20A 208W Chassis Mount SP1
Courant - Drainage continu (Id) à 25 ° C:20A
Email:[email protected]

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