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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Arrays > APTMC120AM25CT3AG
APTMC120AM25CT3AG
APTMC120AM25CT3AG
Artikelnummer:
APTMC120AM25CT3AG
Hersteller:
Microsemi
Beschreibung:
MOSFET 2N-CH 1200V 105A SP3F
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
12687 Pieces
Lieferzeit:
1-2 days
Datenblatt:
APTMC120AM25CT3AG.pdf
Anfrage

Einführung

We can supply APTMC120AM25CT3AG, use the request quote form to request APTMC120AM25CT3AG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTMC120AM25CT3AG.The price and lead time for APTMC120AM25CT3AG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTMC120AM25CT3AG.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.2V @ 4mA (Typ)
Supplier Device-Gehäuse:SP3
Serie:-
Rds On (Max) @ Id, Vgs:25 mOhm @ 80A, 20V
Leistung - max:500W
Verpackung:Bulk
Verpackung / Gehäuse:SP3
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:32 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3800pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:197nC @ 20V
Typ FET:2 N-Channel (Half Bridge)
FET-Merkmal:Silicon Carbide (SiC)
Drain-Source-Spannung (Vdss):1200V (1.2kV)
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 113A (Tc) 500W Chassis Mount SP3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:113A (Tc)
Email:[email protected]

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