APTM60A23FT1G
Artikelnummer:
APTM60A23FT1G
Hersteller:
Microsemi
Beschreibung:
MOSFET 2N-CH 600V 20A SP1
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
68213 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.APTM60A23FT1G.pdf2.APTM60A23FT1G.pdf

Einführung

We can supply APTM60A23FT1G, use the request quote form to request APTM60A23FT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM60A23FT1G.The price and lead time for APTM60A23FT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM60A23FT1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 1mA
Supplier Device-Gehäuse:SP1
Serie:-
Rds On (Max) @ Id, Vgs:276 mOhm @ 17A, 10V
Leistung - max:208W
Verpackung:Bulk
Verpackung / Gehäuse:SP1
Andere Namen:APTM60A23UT1G
APTM60A23UT1G-ND
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5316pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:165nC @ 10V
Typ FET:2 N-Channel (Half Bridge)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Half Bridge) 600V 20A 208W Chassis Mount SP1
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A
Email:[email protected]

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