SQJ910AEP-T1_GE3
SQJ910AEP-T1_GE3
Número de pieza:
SQJ910AEP-T1_GE3
Fabricante:
Electro-Films (EFI) / Vishay
Descripción:
MOSFET 2 N-CH 30V POWERPAK SO8
Cantidad disponible:
26086 Pieces
El tiempo de entrega:
1-2 days
Ficha de datos:
SQJ910AEP-T1_GE3.pdf

Introducción

We can supply SQJ910AEP-T1_GE3, use the request quote form to request SQJ910AEP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ910AEP-T1_GE3.The price and lead time for SQJ910AEP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ910AEP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

Especificaciones

Condición New & Unused, Original Packing
Origen Contact us
VGS (th) (Max) @Id:2.5V @ 250µA
Paquete del dispositivo:PowerPAK® SO-8 Dual
Serie:Automotive, AEC-Q101, TrenchFET®
RDS (Max) @Id, Vgs:7 mOhm @ 12A, 10V
Potencia - Max:48W
embalaje:Tape & Reel (TR)
Paquete / Cubierta:PowerPAK® SO-8 Dual
Temperatura de funcionamiento:-55°C ~ 175°C (TJ)
Tipo de montaje:Surface Mount
Capacitancia de Entrada (Ciss) (Max) @ Vds:1869pF @ 15V
Carga de puerta (Qg) (máx.) @ Vgs:39nC @ 10V
Tipo FET:2 N-Channel (Dual)
Característica de FET:Standard
Voltaje drenaje-fuente (VDS) Las:30V
Descripción detallada:Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Corriente - Drenaje Continuo (Id) @ 25 ° C:30A (Tc)
Email:[email protected]

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