SQJ941EP-T1-GE3
SQJ941EP-T1-GE3
Número de pieza:
SQJ941EP-T1-GE3
Fabricante:
Electro-Films (EFI) / Vishay
Descripción:
MOSFET 2P-CH 30V 8A PPAK SO-8
Estado Libre de plomo / Estado RoHS:
Sin plomo / Cumple con RoHS
Cantidad disponible:
32157 Pieces
El tiempo de entrega:
1-2 days
Ficha de datos:
SQJ941EP-T1-GE3.pdf

Introducción

We can supply SQJ941EP-T1-GE3, use the request quote form to request SQJ941EP-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ941EP-T1-GE3.The price and lead time for SQJ941EP-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ941EP-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Especificaciones

Condición New & Unused, Original Packing
Origen Contact us
VGS (th) (Max) @Id:2.5V @ 250µA
Paquete del dispositivo:PowerPAK® SO-8 Dual
Serie:Automotive, AEC-Q101, TrenchFET®
RDS (Max) @Id, Vgs:24 mOhm @ 9A, 10V
Potencia - Max:55W
embalaje:Tape & Reel (TR)
Paquete / Cubierta:PowerPAK® SO-8 Dual
Temperatura de funcionamiento:-55°C ~ 175°C (TJ)
Tipo de montaje:Surface Mount
Nivel de sensibilidad a la humedad (MSL):1 (Unlimited)
Estado sin plomo / Estado RoHS:Lead free / RoHS Compliant
Capacitancia de Entrada (Ciss) (Max) @ Vds:1800pF @ 10V
Carga de puerta (Qg) (máx.) @ Vgs:55nC @ 10V
Tipo FET:2 P-Channel (Dual)
Característica de FET:Logic Level Gate
Voltaje drenaje-fuente (VDS) Las:30V
Descripción detallada:Mosfet Array 2 P-Channel (Dual) 30V 8A 55W Surface Mount PowerPAK® SO-8 Dual
Corriente - Drenaje Continuo (Id) @ 25 ° C:8A
Email:[email protected]

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